6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 794-1666 / fax: (978) 689-0803 page 1 of 2 maximum ratings (1) ratings symbol value units collector-emitter voltage (3) v ceo 50 vdc collector-base voltage (3) v cbo 75 vdc emitter-base voltage (3) v ebo 6.0 vdc collector current (3) i c 800 madc total power dissipation @ t a = +25 0 c 2n6989 (2) 2n6989u (2) 2n6990 (2) p d 1.5 1.0 0.4 w operating & storage junction temperature range t op , t stg -65 to +200 0 c 1) maximum voltage between transistors shall be 500 vdc 2) derate linearly 8.57 mw/ 0 c above t a = +25 0 c for 2n6989 and 2n6989u derate linearly 2.286 mw/ 0 c above t a = +25 0 c for 2n6990 ratings apply to total package. 3) ratings apply to each transistor in the array. electrical characteristics (t a = 25 0 c unless otherwise noted) characteristics symbol min. max. unit off characteristics collector-emitter breakdown voltage i c = 10 madc v (br) ceo 50 vdc 2n6989, 2n6990 jan, series technical data 2n6989 jan, jtx, jtxv, jans 2n6989u jan, j t x , j t x v , j a n s 2n6990 jan, j t x , j t x v , j a n s processed per mil-prf-19500/559 multiple (quad) npn silicon dual-in-line and flatpack transistor 2n6989 to- 116 2n6989u 20 pin leadless 2n6990 14 pin flat pack mil-prf qml devices
6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 794-1666 / fax: (978) 689-0803 page 2 of 2 electrical characteristics (con?t) characteristics symbol min. max. unit collector-base cutoff current v cb = 60 vdc v cb = 75 vdc; i c = 10 adc i cbo 10 10 adc adc emitter-base cutoff current v eb = 4.0vdc v eb = 6.0vdc; i c = 10 adc i ebo 10 10 adc adc on characteristics forward-current transfer ratio i c = 0.1 madc, v ce = 10 vdc i c = 1.0 madc, v ce = 10 vdc i c = 10 madc, v ce = 10 vdc i c = 150 madc, v ce = 10 vdc i c = 500 madc, v ce = 10 vdc h fe 50 75 100 100 30 325 300 collector-emitter saturation voltage i c = 150 madc, i b = 15 madc i c = 500 madc, i b = 50 madc v ce(sat) 0.3 1.0 vdc base-emitter saturation voltage i c = 150 madc, i b = 15 madc i c = 500 madc, i b = 50 madc v be(sat) 0.6 1.2 2.0 vdc dynamic characteristics magnitude of small-signal short-circuit forward current transfer ratio i c = 20 madc, v ce = 10 vdc, f = 100 mhz ? h fe ? 2.5 10 forward current transfer ratio i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz h fe 50 output capacitance v cb = 10 vdc, i e = 0, 100 khz f 1.0 mhz c obo 8.0 pf input capacitance v eb = 0.5 vdc, i e = 0, 100 khz f 1.0 mhz c ibo 25 pf
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